********************************
* Copyright:                   *
* Vishay Intertechnology, Inc. *
********************************
*Jun 09, 2014
*ECN S14-1177, Rev. B
*File Name: Si1050X_PS.txt and Si1050X_PS.lib
*This document is intended as a SPICE modeling guideline and does not
*constitute a commercial product data sheet.  Designers should refer to the
*appropriate data sheet of the same number for guaranteed specification
*limits.
.SUBCKT Si1050X D G S
M1  3  GX S S NMOS W=398935u L=0.25u   
M2  S  GX S D PMOS W=398935u L=0.50u   
RG  G  GX     3.5
R1  D  3      RTEMP 4E-2
CGS GX S      490E-12
DBD S  D      DBD
**************************************************************** 
.MODEL  NMOS        NMOS ( LEVEL  = 3           TOX    = 1.7E-8
+ RS     = 3E-2            RD     = 0           NSUB   = 2.9E17   
+ kp     = 3.1E-5          UO     = 650             
+ VMAX   = 0               XJ     = 5E-7        KAPPA  = 1E-1
+ ETA    = 1E-4            TPG    = 1  
+ IS     = 0               LD     = 0                             
+ CGSO   = 0               CGDO   = 0           CGBO   = 0 
+ NFS    = 0.8E12          DELTA  = 0.1)
**************************************************************** 
.MODEL  PMOS        PMOS ( LEVEL  = 3           TOX    = 1.7E-8
+NSUB    = 2.3E17          IS     = 0           TPG    = -1)   
**************************************************************** 
.MODEL DBD D (CJO=90E-12 VJ=0.38 M=0.22  
+FC=0.5 TT=4.14e-09 T_MEASURED=25 BV=21 
+RS=6.993e-02 N=1.137 IS=1.909e-09 IKF=1000
+EG=8.545e-01 XTI=1.605e-03 TRS1=8.582e-04 )
**************************************************************** 
.MODEL RTEMP RES (TC1=5E-3 TC2=5.5E-6)
**************************************************************** 
.ENDS
